Measurement and modeling of silicon heterostructure devices
Material type: TextPublication details: Boca Raton CRC Press-Taylor and Francis 2008Description: xiii, 11-12 p.; I-4; 26 cmISBN:- 1420066927
- 621.38152 CRE
Item type | Home library | Collection | Call number | Status | Date due | Barcode | Item holds | |
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Reference Books | LRC, IIT Indore 3rd Floor - Reference Collection | Reference | 621.38152 CRE (Browse shelf(Opens below)) | Not For Loan | 18882 |
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621.38152 BHA.v.6 Comprehensive semiconductor science and technology [6v.] | 621.38152 BIN Tradeoffs and optimization in analog CMOS design | 621.38152 BIN Tradeoffs and optimization in analog CMOS design | 621.38152 CRE Measurement and modeling of silicon heterostructure devices | 621.38152 EAS Pulsed Laser Deposition of thin Films : Applications-led growth of functional Materials | 621.38152 FJE Introduction to device modeling and circuit simulation | 621.38152 GAU Physics and operation of silicon devices in integrated circuits |